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Hiroshi Chonan's 9 research works with 58 citations and 601 reads, including: Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on...
Effect of hole injection in AlGaN/GaN HEMT with GIT structure by numerical simulation. Hiroshi Chonan, Toshihide Ide, Xu-Qiang Shen, Mitsuaki Shimizu. First published: 13 January 2012. https://doi.org/10.1002/pssc.201100330. Citations: 7.
- Hiroshi Chonan, Toshihide Ide, Xu-Qiang Shen, Mitsuaki Shimizu
- 2012
Hiroshi Chonan. Advanced Power Electronics Research Center (ADPERC), Central 2, 1-1-1 Umezono, Tsukuba, 305-8568 Japan. Search for more papers by this author
- Hisashi Yamada, Hisashi Yamada, Hiroshi Chonan, Tokio Takahashi, Mitsuaki Shimizu, Mitsuaki Shimizu
- 2018
Oct 4, 2021 · In this work, InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) based on the AlN/GaN superlattice channel have been demonstrated.
Jan 30, 2019 · Trung Huu Nguyen, Tokio Takahashi, Hiroshi Chonan, Hoang Van Nguyen, Hisashi Yamada, Toshikazu Yamada, Mitsuaki Shimizu. Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel.
- Na Gao, Xiang Feng, Shiqiang Lu, Wei Lin, Qinqin Zhuang, Hangyang Chen, Kai Huang, Shuping Li, Junyo...
- 2019
Characterization of traps at nitrided SiO 2 /SiC interfaces near the conduction band edge by using Hall effect measurements. Tetsuo Hatakeyama, Yuji Kiuchi, Mitsuru Sometani, Shinsuke Harada, Dai Okamoto, Hiroshi Yano, Yoshiyuki Yonezawa and Hajime Okumura. Spotlights 2017. Open abstract View article PDF.
Mar 1, 2012 · H. Chonan, T. Ide, +1 author. M. Shimizu. Published 1 March 2012. Engineering, Physics. Physica Status Solidi (c)
