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William Bradford Shockley Jr. (February 13, 1910 – August 12, 1989) was an American inventor, physicist, and eugenicist. He was the manager of a research group at Bell Labs that included John Bardeen and Walter Brattain.
Quick Facts. In full: William Bradford Shockley. (Show more) Born: Feb. 13, 1910, London, Eng. (Show more) Died: Aug. 12, 1989, Palo Alto, Calif., U.S. (aged 79) (Show more) Awards And Honors: Nobel Prize (1956) (Show more) Inventions: transistor.
- The Editors of Encyclopaedia Britannica
Biographical. William Shockley was born in London, England, on 13th February, 1910, the son of William Hillman Shockley, a mining engineer born in Massachusetts and his wife, Mary (née Bradford) who had also been engaged in mining, being a deputy mineral surveyor in Nevada.
Biography. William Shockley gained fame and shared a Nobel Prize for his development of point-contact transistors, work that provided the basis for one of the sweeping technological revolutions of the twentieth century. His junction and field-effect transistors became workhorses of the electronics industry.
Jun 8, 2018 · Physics: Biographies. William Bradford Shockley. Shockley, William Bradford. views 2,080,195 updated Jun 08 2018. SHOCKLEY, WILLIAM BRADFORD. (b. London, United Kingdom, 13 February 1910; d. Stanford, California, 12 August 1989), solid-state physics, invention of the transistor, operations research, eugenics.
BIOGRAPHICAL MEMOIRS. National Academy of Sciences. William Bradford Shockley February 13, 1910 August 12, 1989 By John L. Moll. WILLIAM BRADFORD SHOCKLEY was a major participant in the physical discoveries and inventions that are the basis of the transistor era and the twentieth-century electronics industrial revolution.
Significant Publications. Bardeen, John, Walter Brattain, and William Shockley, Nobel Lectures-Physics, Elsevier, New York, 1964. Shockley, William, Electrons and Holes in Semiconductors, With Applications to Transistor Electronics, Van Nostrand, New York, 1950. UPDATES. Portrait added (MRW, 2013)
