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1. en.wikipedia.org › wiki › Tantalum_nitrideTantalum nitride - Wikipedia

   en.wikipedia.org › wiki › Tantalum_nitride

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   Tantalum nitride (TaN) is a chemical compound, a nitride of tantalum. There are multiple phases of compounds, stoichimetrically from Ta 2 N to Ta 3 N 5, including TaN. As a thin film TaN find use as a diffusion barrier and insulating layer between copper interconnects in the back end of line of computer chips. Tantalum nitrides are also used in ...

2. link.springer.com › article › 10Fabrication and Characterization of TaxN Thin Films Deposited ...

   link.springer.com › article › 10

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   Aug 6, 2022 · In the current research, tantalum nitride thin films were successfully deposited on Si and SiO2/Si substrates using DC reactive magnetron sputtering technique and studied as a microelectronic device. The phase and structure of the samples were tuned by the nitrogen/argon ratio ([N2/(N2 + Ar)]) and deposition power (75 and 150 W).

3. arxiv.org › pdf › cond-matStructural and electrical properties of tantalum nitride thin ...

   arxiv.org › pdf › cond-mat

   growth mechanism of Ta-N thin films will shed light on the synthesizing of excellent TaN interlayer films in [Fe(Ta, Al)N/TaN] n multilayers as qualified write head materials for recording density of 20-40 Gbit/in 2 or higher.

   • Author: H. B. Nie, S. Y. Xu, S. J. Wang, L. P. You, Z. Yang, C. K. Ong, J. Li, T. Y. F. Liew

   • Publish Year: 2003

4. www.facebook.com › daitanfilmsDai Tan Films - Facebook

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   Dai Tan Films. 4,966 likes · 2,258 talking about this. Filming shows around the UK & Europe. Mostly hardcore but a mix of different styles & occasionally...

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5. www.researchgate.net › figure › The-thickness-sheetThe thickness, sheet resistance, and resistivity of Ta(N) film...

   www.researchgate.net › figure › The-thickness-sheet

   A series of Tantalum Nitride (TaN) films under a reactive direct current magnetron sputtering method with a controlled total gas flow rate were prepared on aluminum oxide substrates.

6. link.springer.com › article › 10Synthesis of Superconductive TaN Thin Films by Reactive DC ...

   link.springer.com › article › 10

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   Jun 7, 2022 · TaN thin films were grown on silicon substrates at a constant temperature. The resulting films were analyzed by atomic force microscopy (AFM), transmission electron microscopy (TEM), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD) and resistance vs. temperature (R-T) techniques.

7. appmicro.springeropen.com › articles › 10Microstructural evolution of tantalum nitride thin films ...

   appmicro.springeropen.com › articles › 10

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   Feb 27, 2020 · Tantalum nitride (TaN x) thin films were grown utilizing an inductively coupled plasma (ICP) assisted direct current (DC) sputtering, and 20–100% improved microhardness values were obtained.

8. People also ask

   How are tan thin films analyzed?

   • TaN thin films were grown on silicon substrates at a constant temperature. The resulting films were analyzed by atomic force microscopy (AFM), transmission electron microscopy (TEM), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD) and resistance vs. temperature (R-T) techniques.

   Synthesis of Superconductive TaN Thin Films by Reactive DC Sputtering …

   link.springer.com/article/10.1007/s11664-022-09721-5

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   How are Ta-n thin films fabricated?

   • The Ta-N thin films were fabricated by using reactive rf (13.56MHz) magnetron sputtering deposition technique on a Denton Vacuum Discovery-18 Deposition System with a 3-inch-diameter tantalum target (purity 99.95%). Both 1 ̋x1 ̋ amorphous glass and 10 mm x 10 mm (100) Si wafers were used as substrates.

   Structural and electrical properties of tantalum nitride thin films

   arxiv.org/pdf/cond-mat/0305683

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   What is a superconductive tan thin film?

   • Superconductive TaN thin films synthesized with reactive direct current (DC) sputtering were grown on silicon substrates at 600°C for 60 min with variations of the N 2 gas flow ratio (R N2 ).

   Synthesis of Superconductive TaN Thin Films by Reactive DC Sputtering …

   link.springer.com/article/10.1007/s11664-022-09721-5

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   What are the electrical properties of TaN films?

   • The electrical properties of TaN films vary from metallic conductor to insulator depending on the relative nitrogen ratio, with N rich films being more resistive. It is sometimes used in integrated circuit manufacture to create a diffusion barrier or "glue" layers between copper, or other conductive metals.

   Tantalum nitride - Wikipedia

   en.wikipedia.org/wiki/Tantalum_nitride

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   What is tantalum nitride (TaN)?

   • ?) Tantalum nitride (TaN) is a chemical compound, a nitride of tantalum. There are multiple phases of compounds, stoichimetrically from Ta 2 N to Ta 3 N 5, including TaN. As a thin film TaN find use as a diffusion barrier and insulating layer between copper interconnects in the back end of line of computer chips.

   Tantalum nitride - Wikipedia

   en.wikipedia.org/wiki/Tantalum_nitride

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   Are Ta-n films crystallized?

   • Firstly, the XRD patterns (Fig. 2a, 2b) indicate that the films are not well crystallized. A considerable amount of amorphous Ta-N materials is expected in the film, where crystalline grains are embedded. This kind of structure is revealed in our TEM analysis.

   Structural and electrical properties of tantalum nitride thin films

   arxiv.org/pdf/cond-mat/0305683

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