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Tantalum nitride (TaN) is a chemical compound, a nitride of tantalum. There are multiple phases of compounds, stoichimetrically from Ta 2 N to Ta 3 N 5, including TaN. As a thin film TaN find use as a diffusion barrier and insulating layer between copper interconnects in the back end of line of computer chips. Tantalum nitrides are also used in ...
Aug 6, 2022 · In the current research, tantalum nitride thin films were successfully deposited on Si and SiO2/Si substrates using DC reactive magnetron sputtering technique and studied as a microelectronic device. The phase and structure of the samples were tuned by the nitrogen/argon ratio ([N2/(N2 + Ar)]) and deposition power (75 and 150 W).
growth mechanism of Ta-N thin films will shed light on the synthesizing of excellent TaN interlayer films in [Fe(Ta, Al)N/TaN] n multilayers as qualified write head materials for recording density of 20-40 Gbit/in 2 or higher.
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A series of Tantalum Nitride (TaN) films under a reactive direct current magnetron sputtering method with a controlled total gas flow rate were prepared on aluminum oxide substrates.
Jun 7, 2022 · TaN thin films were grown on silicon substrates at a constant temperature. The resulting films were analyzed by atomic force microscopy (AFM), transmission electron microscopy (TEM), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD) and resistance vs. temperature (R-T) techniques.
Feb 27, 2020 · Tantalum nitride (TaN x) thin films were grown utilizing an inductively coupled plasma (ICP) assisted direct current (DC) sputtering, and 20–100% improved microhardness values were obtained.
