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Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI3/hBN/WSe2 heterostructure - Nature Communications
The back gate Vbg and top gate Vtg are used to control the doping of CrI3 and WSe2, respectively. In order to maintain the spin polarization during the carrier injection, a thin hBN tunneling ...
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Dielectric breakdown of oxide films in electronic devices - Nature Reviews Materials
Dielectric breakdown is a major reliability issue in electronic devices. This Review discusses the data and knowledge accumulated from experimental and theoretical studies of dielectric breakdown ...
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