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Simon Min Sze, or Shi Min ( Chinese: 施敏; pinyin: Shī Mǐn; 21 March 1936 – 6 November 2023), was a Taiwanese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967.
Nov 8, 2023 · With an illustrious career spanning several decades, Dr. Sze’s contributions to the realm of electronics and semiconductor devices have left an indelible mark on the industry. Let’s take a closer look at his life, his groundbreaking achievements, and the enduring legacy he leaves behind.
Nov 8, 2023 · Dr. Simon Min Sze, a semiconductor physics visionary most notable for his contributions to the invention of the world's first floating-gate metal-oxide-semiconductor field-effect transistor...
Biography. Simon M. Sze (LF’77) received the B.S. degree in electrical engineering from the National Taiwan University, Taipei, Taiwan, the M.S. degree in electrical engineering from the University of Washington, Seattle, WA, USA, and the Ph.D. degree in electrical engineering from Stanford University, Stanford, CA, USA.
Remembering Dr. Simon Sze: A Seminal Figure in Semiconductor Technology, Mentor, and Visionary [Obituary] Abstract: Recounts the career and contributions of Simon Sze. Published in: IEEE Electron Devices Magazine ( Volume: 1 , Issue: 3 , December 2023 )
Apr 10, 2006 · He has made fundamental and pioneering contributions to semiconductor devices; of particular importance is his coinvention of nonvolatile semiconductor memory such as flash memory and EEPROM. Dr. Sze has authored, coauthored, or edited over 200 technical papers and twelve books.
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Simon SZE. Prof. Simon Sze has made pioneering contributions to inter-metal/semiconductor carrier transports for semiconductor devices, including both analytical and experimental investigations to Ohmic and Schottky contact behaviors over extensive doping (1014-1020/cm3) and operating temperature ranges (Si: 77K-373K; GaAs: 50K-500K) by ...
